Our research group is at the forefront of developing advanced post-silicon electronic materials that serve as the foundation of next-generation devices. For instance, we demonstrated a stretchable carbon nanotube transistor using a vacuum-deposited polymer dielectric that can enable stretchable active matrix systems (^(ⅰ)Nature Electronics, 2023). In parallel, we engineered covalent heterostructures of ultrathin amorphous carbon nitride and silicon, which have enabled high-performance vertical photodiodes and rectifying devices (^(M)Nature Synthesis, 2025). Additional examples include our ultrathin phototransistor array based on MoS₂ and graphene (^(ⅱ)Nature Communications, 2017), as well as high-resolution spin-on-patterning technique for perovskite thin films (^(ⅲ)Advanced Materials, 2017), further reinforcing our commitment to pioneering electronic material and device technologies.