Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfide (MoS₂) nanosheets for a flexible resistive random access memory (RRAM) array are presented. RRAM using MoS₂ nanosheets shows a ≈10 000 times higher on/off ratio than that based on exfoliated MoS₂. The good uniformity of the MoS₂ nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes.